| 摘要 |
A method of forming a dual segment liner covering a first and a second set of semiconductor devices is provided. The method includes forming a first liner and a first protective layer on top thereof, the first liner covering the first set of semiconductor devices; forming a second liner, the second liner having a first section covering the first protective layer, a transitional section, and a second section covering the second set of semiconductor devices, the second section being self-aligned to the first liner via the transitional section; forming a second protective layer on top of the second section of the second liner; removing the first section and at least part of the transitional section of the second liner; and obtaining the dual segment liner including the first liner, the transitional section and the second section of the second liner. A semiconductor structure with a self-aligned dual segment liner formed in accordance with one embodiment of the invention is also provided.
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