发明名称 HIGH-TEMPERATURE CATHODE FOR PLASMA ETCHING
摘要 PROBLEM TO BE SOLVED: To provide a cathode generally suitable for use in high-temperature plasma etching applications. SOLUTION: In one embodiment, the cathode includes a ceramic electrostatic chuck fixed to the base. A cooling duct is formed inside the base. A rigid supporting ring is arranged between the chuck and the base for keeping the chuck and the base in isolated relation. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009021592(A) 申请公布日期 2009.01.29
申请号 JP20080176587 申请日期 2008.07.07
申请人 APPLIED MATERIALS INC 发明人 YENDLER BORIS S;MATYUSHKIN ALEXANDER;KOOSAU DENIS M;EGAMI GLEN E
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
主权项
地址