PURPOSE: A substrate processing apparatus is provided to improve a substrate processing speed using resonant plasma with ion energy and plasma density. CONSTITUTION: A chamber(100) includes an inner space which processes a substrate(S). A first shower head(310) and a second shower head(320) are arranged on the upper side of a substrate support unit(200) and spray source gas. A plasma generating tube(510) passes through the first shower head and the second shower head. An antenna(520) is wound around the outer side of the plasma generating tube. A magnetic field generating unit(600) is installed in the inner side or the outer side of the chamber. [Reference numerals] (AA) Second plasma area; (BB) First plasma area
