| 摘要 |
PURPOSE: An antifuse of a semiconductor device and a method for forming the same are provided to reduce the occupation area of the antifuse and to improve the productivity of a net die. CONSTITUTION: A pillar(101a) is protruded on a semiconductor substrate. A first bit line metal layer(126) is buried in the lower part for the pillar. The first oxide film is formed in the contact part of the first bit line metal layer and the pillar. A first junction area(120) is diffused into the pillar. A first barrier metal layer surrounds the sidewall of the first bit line metal layer.
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