| 摘要 |
A memory control method includes: latching a clock signal to selectively generate a phase lead detection result and a phase lag detection result in response to a data strobe signal; delaying the data strobe signal to generate a plurality of delayed data strobe signals; latching the clock signal to generate a plurality of phase detection results in response to the delayed data strobe signals so as to correspond to the delayed data strobe signals; latching write data carried by a data signal according to rising/falling edges of the data strobe signal; performing odd/even data separation on the write data to generate a data separation signal carrying odd/even data corresponding to the write data; and in a situation where the data strobe signal leads the clock signal, delaying or bypassing the odd/even data carried by the data separation signal according to the phase detection results. A memory control circuit is provided.
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