| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP abrasive for a semiconductor insulating film and a substrate polishing method, polishing a semiconductor insulating film at a high speed without a polishing damage and suppressing dishing. SOLUTION: The CMP abrasive for a semiconductor insulating film contains cerium oxide particles, a high-density polyethylene resin, a dispersant, and water. Then, the particle diameter of D50 volume% of the cerium oxide particle is set to 50 to 300 nm and the particle diameter of D99 volume% is set to 200 to 1,000 nm. COPYRIGHT: (C)2009,JPO&INPIT |
