METHOD FOR EVALUATING A QUALITY OF WAFER OR SINGLE CRYSTAL INGOT AND METHOD FOR CONTROLLING A QUALITY OF SINGLE CRYSTAL INGOT

摘要

PURPOSE: A method for evaluating a quality of a wafer or single crystal ingot and a method for controlling the quality of the single crystal ingot are provided to correctly predict the quality of a wafer by using a scoring on all prime regions. CONSTITUTION: A copper haze evaluation is performed on a wafer. The copper haze evaluation is performed on the piece of single crystalline ingot. A copper haze scoring is performed on the result of copper haze evaluation. A first thermal process is performed on one part of the piece of the single crystalline ingot. A second thermal process is performed on the other part of the piece of the single crystalline ingot. [Reference numerals] (AA) Crystal defect area