| 摘要 |
<p>A method is for the formation of at least one isolation trench filled with thermal oxide in a semiconductor layer and a semiconductor device include at least one isolation trench filled with thermal oxide. The method allows obtaining in an easy way, isolation trenches exhibiting excellent functional morphological properties. The method is based on the idea of exploiting the properties of the thermal oxidation mechanism of a semiconductor material in order to obtain at least an isolation trench filled with thermal oxide.</p> |
