| 摘要 |
A method for forming an element isolation film of a semiconductor device is provided to prevent the degradation phenomenon of the device by forming a high density plasma layer after forming a SOD(Spin On Dielectric) layer in a side wall of a trench area additionally. A trench is formed on a semiconductor substrate(100). A side wall oxide layer(150) and a liner nitride layer(160) are formed in a bottom part and a sidewall part of the trench. A first insulating layer(170) is formed in an upper part of the liner nitride layer. A second insulating layer(180) is formed in a sidewall of the liner nitride layer and an upper part of the first insulating layer. The trench is filled by forming a third insulating layer(190) in the upper part of the second nitride layer. The thickness of the first insulating layer is 5000 to 6000 angstrom.
|
