发明名称 Method for forming a doped region in a semiconductor layer of a substrate and use of such method
摘要 <p>Method for forming a doped region in a semiconductor layer of a substrate by alloying with doping elements by screen printing a paste layer of doping element paste to the substrate and firing the screen printed paste layer of doping element paste, characterized in that a highly pure doping element layer is applied to the semiconductor layer after which the paste layer is screen printed to the doping element layer.</p>
申请公布号 EP2398071(B1) 申请公布日期 2013.01.16
申请号 EP20110166861 申请日期 2011.05.20
申请人 IMEC 发明人 SINGH, SUKHVINDER
分类号 H01L31/068;H01L31/18 主分类号 H01L31/068
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