| 发明名称 |
Group III nitride film containing aluminum with hexagonal system crystal structure |
| 摘要 |
<p>A III nitride film is directly grown on a crystalline substrate along the C-axis, and includes at least Al element. Then, the III nitride film has hexagonal crystal system, and the lattice constant "c" of the main axis and the lattice constant "a" of the crystal face perpendicular to the main surface satisfies the relation of "C>2.363a-3.232".</p> |
| 申请公布号 |
EP1199388(B1) |
申请公布日期 |
2013.01.16 |
| 申请号 |
EP20010124811 |
申请日期 |
2001.10.17 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA, TOMOHIKO;NAKAMURA, YUKINORI;TANAKA, MITSUHIRO |
| 分类号 |
C30B29/38;C30B29/40;C30B25/02;H01L21/02;H01L21/20;H01L21/205;H01L33/16;H01L33/32 |
主分类号 |
C30B29/38 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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