| 摘要 |
<p>Disclosed herein is a semiconductor device that includes: a first circuit formed on a chip having a main surface; first to n th penetration electrodes penetrating through the chip, where n is an integer more than 1; first to n th main terminals arranged on the main surface of the chip and vertically aligned with the first to n th penetration electrodes, respectively, each of k th main terminal being electrically connected to k+1 th penetration electrode, where k is an integer more than 0 and smaller than n, and the n th main terminal being electrically connected to the first penetration electrode; a sub-terminal arranged on the main surface of the chip; and a selection circuit electrically connected to predetermined one of the first to n th main terminals, the sub-terminal, and the first circuit, wherein the selection circuit connects the first circuit to one of the predetermined main terminal and the sub-terminal.</p> |
