| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element that not only achieves low voltage and high-speed operation but also has reversibly stable rewrite characteristics, its manufacturing method and a nonvolatile semiconductor device using same. SOLUTION: The nonvolatile memory element includes a resistance change layer 107 which is disposed between a first electrode 103 and second electrode 108 and in which the resistance value reversibly changes based on electric signals of different polarities applied between both electrodes 103 and 108. The resistance change layer 107 includes at least a laminate structure where a first zirconium oxide layer having a composition expressed by ZrO<SB>x</SB>(0.9≤x≤1.4) and a second zirconium oxide layer having a composition expressed by ZrO<SB>y</SB>(1.9<y<2.0) are laminated. COPYRIGHT: (C)2010,JPO&INPIT |
