SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the reliability of a transistor by reducing an amount of carbon discharged from a glass substrate with oxygen ion implantation. CONSTITUTION: An oxide semiconductor layer(106) is formed on a substrate(100). A pair of electrodes(116) are formed on the oxide semiconductor layer. A gate insulating layer(112) covers the oxide semiconductor layer and a pair of electrodes. The gate insulation layer includes an insulation layer which discharges oxygen by a heating process. A gate electrode(104) overlaps with the oxide semiconductor layer through the gate insulation layer.