发明名称 METHOD OF FORMING MICROPATTERN, METHOD OF DAMASCENE METALLIZATION, AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE FABRICATED USING THE SAME
摘要 PURPOSE: A method for forming a micropattern, a damascene metallization method, and a semiconductor device and a semiconductor memory device fabricated using the same are provided to improve the formation of an activation line by preventing the pitch of a metal line from being decreased. CONSTITUTION: A dummy region is formed in an activation line area. A micro-pattern is formed on a substrate. A first mask(130) is formed in a dummy region. A mold mask pattern(140) is formed on the substrate and the first mask. A spacer(150) is formed in the sidewall of the mold mask pattern.
申请公布号 KR20130005463(A) 申请公布日期 2013.01.16
申请号 KR20110066865 申请日期 2011.07.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, IN SUN;CHOI, GIL HEYUN;PARK, JI SOON;LEE, JONG MYEONG;HONG, JONG WON;KIM, HEI SEUNG
分类号 H01L21/8247;H01L21/027;H01L27/115 主分类号 H01L21/8247
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