发明名称 |
METHOD OF FORMING MICROPATTERN, METHOD OF DAMASCENE METALLIZATION, AND SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE FABRICATED USING THE SAME |
摘要 |
PURPOSE: A method for forming a micropattern, a damascene metallization method, and a semiconductor device and a semiconductor memory device fabricated using the same are provided to improve the formation of an activation line by preventing the pitch of a metal line from being decreased. CONSTITUTION: A dummy region is formed in an activation line area. A micro-pattern is formed on a substrate. A first mask(130) is formed in a dummy region. A mold mask pattern(140) is formed on the substrate and the first mask. A spacer(150) is formed in the sidewall of the mold mask pattern. |
申请公布号 |
KR20130005463(A) |
申请公布日期 |
2013.01.16 |
申请号 |
KR20110066865 |
申请日期 |
2011.07.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, IN SUN;CHOI, GIL HEYUN;PARK, JI SOON;LEE, JONG MYEONG;HONG, JONG WON;KIM, HEI SEUNG |
分类号 |
H01L21/8247;H01L21/027;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|