SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to easily drive memory cells according to a memory block by forming a first slit on a memory device to separate adjacent memory blocks. CONSTITUTION: A memory block includes a pipe channel(P_CH), a pair of drain side channels(D_CH) and source side channel(S_CH). A first slit is located between adjacent memory blocks. A second slit is located between the pair of source side channel and drain side channel and separates a source side word line(S_WL) from a drain side word line(D_WL). A third slit is located between the adjacent drain side channels and separates the drain side word line from a drain selection line(DSL).