| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light emitting device, which minimizes the lens shifting amount of a common optical system, and reduces the size of an optical disk unit. SOLUTION: An n-type clad layer 41 to a p-type contact layer 44 are sequentially grown on a substrate 22, the upper layer portions of the p-type contact layer 44 and the p-type clad layer 43 are etched selectively to form asymmetric elongated ridge portions. The p-type contact layer 44 to the n-type clad layer 41 are removed selectively, to form an AlGaInP-based laser element 24 on the (011) plane side of the substrate 22. After an n-type clad layer 52 to p-type contact layer 55 are grown sequentially on the substrate 22, they are removed selectively, to form a current block region 56 on the upper layer portions of the p-type contact layer 55 and the p-type clad layer 54. An AlGaAs laser element 26 is thus formed on the (0-1-1) plane side of the substrate 22. COPYRIGHT: (C)2010,JPO&INPIT |
