发明名称 GAS INJECTION ASSEMBLY AND APPARATUS FOR PROCESSING SUBSTRATE
摘要 PURPOSE: A gas spray assembly and a substrate processing device are provided to improve a substrate processing speed using the first plasma and the second plasma with different ion energy properties and different density properties. CONSTITUTION: A chamber(100) includes an inner space for processing a substrate(S). A substrate support unit(500) supports the substrate. A gas spray assembly(700) is arranged on the upper side of the substrate support unit and sprays source gas and includes a top body(200), a first body(310), and a second body(320). A power supply unit(540) supplies bias power to the substrate support unit.
申请公布号 KR20130005840(A) 申请公布日期 2013.01.16
申请号 KR20110067480 申请日期 2011.07.07
申请人 CHARM ENGINEERING CO., LTD. 发明人 LEE, KEE SU;HAN, YOUNG KI;CHOI, JAE CHUL
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
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