发明名称 |
GAS INJECTION ASSEMBLY AND APPARATUS FOR PROCESSING SUBSTRATE |
摘要 |
PURPOSE: A gas spray assembly and a substrate processing device are provided to improve a substrate processing speed using the first plasma and the second plasma with different ion energy properties and different density properties. CONSTITUTION: A chamber(100) includes an inner space for processing a substrate(S). A substrate support unit(500) supports the substrate. A gas spray assembly(700) is arranged on the upper side of the substrate support unit and sprays source gas and includes a top body(200), a first body(310), and a second body(320). A power supply unit(540) supplies bias power to the substrate support unit.
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申请公布号 |
KR20130005840(A) |
申请公布日期 |
2013.01.16 |
申请号 |
KR20110067480 |
申请日期 |
2011.07.07 |
申请人 |
CHARM ENGINEERING CO., LTD. |
发明人 |
LEE, KEE SU;HAN, YOUNG KI;CHOI, JAE CHUL |
分类号 |
H01L21/205;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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