NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE

摘要

The present invention relates to a nonvolatile memory device including multiplanes. The nonvolatile memory device according to the present invention comprises: a first plane formed on a semiconductor layer and including first cell strings formed in a first direction perpendicular to the semiconductor layer; a second plane formed on the semiconductor layer and including second cell strings formed in the first direction; a first address decoder for providing first operation voltage for the first plane; a second address decoder for providing second operation voltage for the second plane; a first peripheral circuit, formed between a substrate and the first plane, for controlling the first address decoder; and a second peripheral circuit, formed between the substrate and the second plane, for controlling the second address decoder, wherein the first peripheral circuit and the second peripheral circuit are connected through a peripheral conductive layer formed in a lower part of the semiconductor layer.