发明名称 Voltage regulator having a temperature sensitive leakage current sink circuit
摘要 Provided is a voltage regulator including a leakage current sink circuit capable of suppressing an influence of a leakage current of an output transistor at high temperature, and reducing power consumption of the voltage regulator at normal temperature. The voltage regulator includes: a reference voltage circuit configured to output a reference voltage; an output transistor configured to output an output voltage; a voltage divider circuit configured to divide the output voltage to output a feedback voltage; an error amplifier circuit configured to amplify a difference between the reference voltage and the feedback voltage, and output the amplified difference to control a gate of the output transistor; and a leakage current sink circuit connected to an output terminal and configured to be prevented from operating at normal temperature, and suppress an influence of a leakage current from the output transistor only at high temperature.
申请公布号 US9372489(B2) 申请公布日期 2016.06.21
申请号 US201414517153 申请日期 2014.10.17
申请人 SII SEMICONDUCTOR CORPORATION 发明人 Kobayashi Yuji;Suzuki Teruo
分类号 G05F1/56;G05F1/567;G05F3/24 主分类号 G05F1/56
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A voltage regulator comprising: a reference voltage circuit configured to output a reference voltage; an output transistor configured to output an output voltage; a voltage divider circuit configured to divide the output voltage and to output a feedback voltage; an error amplifier circuit configured to amplify a difference between the reference voltage and the feedback voltage, and output the amplified difference to control a gate of the output transistor; and a leakage current sink circuit connected to an output terminal of the voltage regulator, the leakage current sink circuit comprising: a temperature circuit comprising: a first enhancement transistor including a gate and a source both connected to a ground terminal; anda second depletion transistor including a gate connected to the ground terminal, a drain connected to the output terminal, and a source connected to a drain of the first transistor; and a transistor circuit configured to cause a leakage current to flow, that is controlled by a signal output from the temperature detection circuit, wherein the transistor circuit comprises: a third transistor configured to be turned on and off in accordance with a voltage of the source of the second transistor; anda fourth transistor connected to the third transistor, the fourth transistor configured to cause the leakage current to flow from the output terminal,the leakage current sink circuit configured to be prevented from operating at normal temperature, and suppress an influence of the leakage current from the output transistor on the output terminal only at high temperature.
地址 Chiba JP