发明名称 |
Variable impedance control for memory devices |
摘要 |
<p>This document generally describes systems, devices, methods, and techniques for variably controlling impedance for a memory device where multiple NVM units (e.g., NVM dies) are accessible over a shared bus. Impedance can be varied using switches that are configured to switch between a NVM unit and an impedance terminal. Switches can be adjusted during operation of a memory device so that a memory controller is connected over a shared bus to a selected single NVM unit and one or more impedance terminals. Impedance terminals can be configured to provide a relatively small load (a smaller load than an NVM unit) that is impedance matched (alone or in combination with other impedance terminals and/or a NVM unit) with a source impedance on a shared bus that is provided by a memory controller.</p> |
申请公布号 |
EP2521040(A3) |
申请公布日期 |
2013.01.16 |
申请号 |
EP20120156758 |
申请日期 |
2012.02.23 |
申请人 |
APPLE INC. |
发明人 |
FAI, ANTHONY;SEROFF, NICHOLAS |
分类号 |
G06F13/40;G06F13/42;G11C5/06;G11C7/10;G11C8/10 |
主分类号 |
G06F13/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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