| 摘要 |
PROBLEM TO BE SOLVED: To effectively synthesize a conductive boron-doped diamond film on a large-sized substrate surface by a microwave plasma CVD method while quality is maintained.SOLUTION: An apparatus including a cylindrical cavity resonator structure introducing a microwave having an oscillation frequency of 915 MHz into a synthesis chamber through a mode conversion device is used. A conductive B-doped diamond film is grown on a substrate surface through the steps of: placing the substrate on a substrate table with an edge on its periphery; adjusting a standing position of a plasma by placing a microwave reflector in a lower side of the substrate table in the synthesis chamber; mixing boron source gas and the reaction gas and supplying them in a middle position of a reactive gas supply tube for diamond production; and forming a single ellipsoidal plasma on the substrate surface under a condition of a synthesis chamber internal pressure 0.1-20.0 kPa, a substrate temperature 800°C-1200°C, and a microwave output 1-3 kW.SELECTED DRAWING: Figure 1 |
