| 摘要 |
The present invention relates to a semiconductor device with a semiconductor substrate with a first area and a second area. The first area includes a first set of pin structures, while the first set of pin structures includes a first conductive type first set of an epitaxial punch-through preventing features. The first area additionally includes a first set of transistors, arranged on the first set of pin structures. The second area includes a second set of pin structures, additionally including a second conductive type, which is the opposite of the first conductive type, second set of epitaxial punch-through preventing features. The second area additionally includes a second set of transistors, arranged on the second set of pin structures. The first set and the second set of epitaxial punch-through preventing features are technically on the same plane. |
