Semiconductor device and method for manufacturing the same

摘要

In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming a gate electrode over a substrate; forming a gate insulating film so as to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a pair of electrodes over the oxide semiconductor film, the pair of electrodes being in contact with at least part of the oxide semiconductor film; forming a protective film over the oxide semiconductor film and the pair of electrodes; and performing heat treatment so as to release hydrogen from the oxide semiconductor film, wherein the protective film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order.