| 摘要 |
<p>A semiconductor device ( 100 ) according to the present invention includes: a substrate ( 1 ); a gate electrode ( 11 ) which is arranged on the substrate; a gate insulating layer ( 12 ) which has been formed on the gate electrode; an oxide semiconductor layer ( 13 ) which has been formed on the gate insulating layer and which includes a channel region ( 13c ) and source and drain regions ( 13s, 13d ) that interpose the channel region between them; a source electrode ( 14 ) which is electrically connected to the source region; a drain electrode ( 15 ) which is electrically connected to the drain region; and a metallic compound layer ( 16 ) which is arranged between the source and drain electrodes so as to be located on, and contact with, the oxide semiconductor layer. The metallic compound layer is an insulating layer or semiconductor layer which is made of a compound of the same metallic element as at least one of metallic elements that are included in the source and drain electrodes.</p> |
