NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A nitride semiconductor light emitting diode is provided to improve the crystallization of a contact layer by inserting at least one doped p-type nitride film having low concentration on a contact layer. CONSTITUTION: A light emitting structure includes a p-type nitride semiconductor layer(16) and an n-type nitride semiconductor layer(14). The light emitting structure includes an active layer(15) formed between the semiconductor layers. A p-type electrode is electrically connected to the p-type nitride semiconductor layer. An n-type electrode is electrically connected to the n-type nitride semiconductor layer. A contact layer(17) is positioned between the p-type nitride semiconductor layer and the p-type electrode.