| 摘要 |
PURPOSE: A chemical mechanical polishing apparatus and a controlling method thereof are provided to easily replace a wafer by moving a carrier head after a nozzle body and a conditioner are physically restricted. CONSTITUTION: A nozzle body mounts a plurality of cleansing liquid supply nozzles. The plurality of cleansing liquid supply nozzles spray cleansing liquid with high pressure to a platen pad(11). A slurry supply unit(120) supplies slurry to the surface of the platen pad. A conditioner(40) disperses the slurry to the surface of the platen pad. A carrier head moves only when the nozzle body is moved to a standby location.
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