| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method proper to the equalization of the joining states of each bump when a plurality of the bumps are ultrasonically joined collectively when two semiconductor chips are joined ultrasonically through a plurality of the bumps. <P>SOLUTION: In the method for manufacturing a semiconductor device, a first semiconductor chip 10 and a second semiconductor chip 20 arranging a plurality of the bumps 31 and 32 on one surface side in a plane shape respectively are prepared, and a horn 100 oscillating ultrasonic waves is applied to the other surface of the first semiconductor chip 10. In the method for manufacturing the semiconductor device, each bump 31 and 32 for both semiconductor chips 10 and 20 are brought into contact mutually, and ultrasonic waves are applied to the bumps 31 for the first semiconductor chip 10 by the horn 100. In such a method for manufacturing the semiconductor device, applied ultrasonic energies to the bumps 31 positioned at a peripheral section are made larger than the bumps 31 positioned at a central section in the vibrational direction X of the first semiconductor chip 10 by ultrasonic waves in one surface of the first semiconductor chip 10. <P>COPYRIGHT: (C)2009,JPO&INPIT |
