LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A light emitting device and a manufacturing method are provided to improve luminous efficiency by using an ELOG(Epitaxial Lateral Over Growth) method. CONSTITUTION: A first conductive semiconductor layer(120) with a plurality of uneven parts is formed on a substrate(110). An active layer(145) is formed on the first conductive semiconductor layer and includes at least one well layer(130) and at least one barrier layer(140). The well layer has different thickness according to the location of the plurality of uneven parts. A second conductive semiconductor layer(150) is formed on the active layer.