| 摘要 |
PURPOSE: A method for operating a semiconductor device is provided to prevent a leakage in an unselected memory cell by constantly maintaining a gradually rising program voltage after the program voltage reaches approaches a specific level. CONSTITUTION: Selected memory cells are programmed by applying a gradually rising first program voltage(Vpgm1) to a selected word line and a first pass voltage(Vpass1) to unselected word lines. The selected memory cells are programmed by applying a second program voltage(Vpgm2) to the selected word line and a gradually rising second pass voltage(Vpass2) to first unselected word lines near the selected word line if a voltage difference between the first program voltage and the first pass voltage reaches a critical dimension. [Reference numerals] (AA) Voltage; (BB) Critical dimension; (CC) Rest of WL; (DD) Number of program pulse application |
