发明名称 Chemical detection with MOSFET sensor
摘要 Embodiments relate to a method including receiving a voltage potential at a gate of a first MOSFET based on a sensed chemical characteristic. The method includes receiving at a backgate of the first MOSFET an AC voltage signal and analyzing, with an analysis circuit connected to one of a first source and a first drain of the MOSFET, the sensed characteristic based on the receiving the voltage potential at the gate of the first MOSFET.
申请公布号 US8354876(B1) 申请公布日期 2013.01.15
申请号 US201213550967 申请日期 2012.07.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;HASSIBI ARJANG;HEKMATSHOARTABARI BAHMAN;KHAKIFIROOZ ALI;SHAHRJERDI DAVOOD 发明人 HASSIBI ARJANG;HEKMATSHOARTABARI BAHMAN;KHAKIFIROOZ ALI;SHAHRJERDI DAVOOD
分类号 H03K3/01 主分类号 H03K3/01
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