发明名称 |
Chemical detection with MOSFET sensor |
摘要 |
Embodiments relate to a method including receiving a voltage potential at a gate of a first MOSFET based on a sensed chemical characteristic. The method includes receiving at a backgate of the first MOSFET an AC voltage signal and analyzing, with an analysis circuit connected to one of a first source and a first drain of the MOSFET, the sensed characteristic based on the receiving the voltage potential at the gate of the first MOSFET.
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申请公布号 |
US8354876(B1) |
申请公布日期 |
2013.01.15 |
申请号 |
US201213550967 |
申请日期 |
2012.07.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;HASSIBI ARJANG;HEKMATSHOARTABARI BAHMAN;KHAKIFIROOZ ALI;SHAHRJERDI DAVOOD |
发明人 |
HASSIBI ARJANG;HEKMATSHOARTABARI BAHMAN;KHAKIFIROOZ ALI;SHAHRJERDI DAVOOD |
分类号 |
H03K3/01 |
主分类号 |
H03K3/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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