发明名称 |
Structures including passivated germanium |
摘要 |
A passivated germanium surface that is a germanium carbide material formed on and in contact with the termanium material. An intermediate semiconductor device structure and a semiconductor device structure, each of which comprises the passivated germanium having germanium carbide material thereon, are also disclosed.
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申请公布号 |
US8354738(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US201113072182 |
申请日期 |
2011.03.25 |
申请人 |
ROUND ROCK RESEARCH, LLC;FORBES LEONARD;AHN KIE Y. |
发明人 |
FORBES LEONARD;AHN KIE Y. |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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