发明名称 Semiconductor device and method for manufacturing the same
摘要 It is an object of the present invention to suppress poor connection or increase in contact resistance even in the case where an antenna is formed over an integrated circuit portion. An integrated circuit portion having a first conductive film is formed over a substrate, an insulating film is formed over the integrated circuit portion, a second conductive film serving as an antenna is formed over the insulating film, an opening is formed in the insulating film and the second conductive film to expose the first conductive film, and a third conductive film is formed in the opening and over a top surface of the second conductive film by a plating process to electrically connect the first conductive film and the second conductive film.
申请公布号 US8353459(B2) 申请公布日期 2013.01.15
申请号 US20080076997 申请日期 2008.03.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI SHUNPEI 发明人 YAMAZAKI SHUNPEI
分类号 G06K21/06;H01L23/495 主分类号 G06K21/06
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