摘要 |
An internal signal monitoring device in a semiconductor memory device includes: an internal signal input unit to receive an internal signal to be monitored and having an output to provide a monitor source signal in response to a test mode signal; and an internal signal output unit having an input coupled to the output of the internal signal input unit, the internal signal output unit to transmit the monitor source signal to a predetermined pad of the semiconductor memory device in response to the test mode signal.
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