发明名称 Internal signal monitoring device in semiconductor memory device and method for monitoring the same
摘要 An internal signal monitoring device in a semiconductor memory device includes: an internal signal input unit to receive an internal signal to be monitored and having an output to provide a monitor source signal in response to a test mode signal; and an internal signal output unit having an input coupled to the output of the internal signal input unit, the internal signal output unit to transmit the monitor source signal to a predetermined pad of the semiconductor memory device in response to the test mode signal.
申请公布号 US8356214(B2) 申请公布日期 2013.01.15
申请号 US20070823616 申请日期 2007.06.28
申请人 HYNIX SEMICONDUCTOR INC.;DO CHANG-HO 发明人 DO CHANG-HO
分类号 G11C29/00;G01R31/28 主分类号 G11C29/00
代理机构 代理人
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