发明名称 |
Solid state imaging device and method for fabricating the same |
摘要 |
A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.
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申请公布号 |
US8354693(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20080035340 |
申请日期 |
2008.02.21 |
申请人 |
PANASONIC CORPORATION;MORI MITSUYOSHI;OKINO TORU;UEDA DAISUKE;MATSUNO TOSHINOBU |
发明人 |
MORI MITSUYOSHI;OKINO TORU;UEDA DAISUKE;MATSUNO TOSHINOBU |
分类号 |
H01L31/0336 |
主分类号 |
H01L31/0336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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