发明名称 |
Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
摘要 |
An object is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer exists in a peripheral portion, whereby the insulating layer is removed; and etching treatment is performed on the semiconductor substrate with the use of a mixed solution including a substance that oxidizes a semiconductor material included in the semiconductor substrate, a substance that dissolves the oxidized semiconductor material, and a substance that controls oxidation speed of the semiconductor material and dissolution speed of the oxidized semiconductor material, whereby the damaged semiconductor region is selectively removed with a non-damaged semiconductor region left.
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申请公布号 |
US8354348(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20100859490 |
申请日期 |
2010.08.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;HANAOKA KAZUYA;IMAI KEITARO |
发明人 |
HANAOKA KAZUYA;IMAI KEITARO |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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