| 摘要 |
PURPOSE: A nitride based light emitting device with a high luminous property using impurities is provided to improve a luminous property by forming a p-electrode contact layer doped with a p type impurity and an n type impurity on a p type nitride layer. CONSTITUTION: An n type nitride layer(210) is formed on a substrate. An active layer(220) is formed on the n type nitride layer. A p type nitride layer(230) is formed on the active layer. A p-electrode contact layer(240) is formed on the p type nitride layer. The p-electrode contact layer is made of nitride doped with the n type impurity and the p type impurity. [Reference numerals] (240) P-electrode contact : Si, Mg |
