发明名称 |
Semiconductor device with side-junction and method for fabricating the same |
摘要 |
A method for fabricating a semiconductor device includes forming a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench, forming a doped layer gap-filling the trench, forming a sidewall junction at the exposed sidewall of the diffusion barrier region by annealing the doped layer, and forming a conductive line coupled with the sidewall junction to fill the trench.
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申请公布号 |
US8354342(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20100939677 |
申请日期 |
2010.11.04 |
申请人 |
HYNIX SEMICONDUCTOR INC.;OH JAE-GEUN;JEON SEUNG-JOON;LEE JIN-KU;LEE MI-RI;JEON BONG-SEOK |
发明人 |
OH JAE-GEUN;JEON SEUNG-JOON;LEE JIN-KU;LEE MI-RI;JEON BONG-SEOK |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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