发明名称 Semiconductor device and method of forming different height conductive pillars to electrically interconnect stacked laterally offset semiconductor die
摘要 A semiconductor device has a first semiconductor die mounted over a carrier. Wettable contact pads can be formed over the carrier. A second semiconductor die is mounted over the first semiconductor die. The second die is laterally offset with respect to the first die. An electrical interconnect is formed between an overlapping portion of the first die and second die. A plurality of first conductive pillars is disposed over the first die. A plurality of second conductive pillars is disposed over the second die. An encapsulant is deposited over the first and second die and first and second conductive pillars. A first interconnect structure is formed over the encapsulant, first conductive pillars, and second die. The carrier is removed. A second interconnect structure is formed over the encapsulant, second conductive pillars, and first die. A third conductive pillar is formed between the first and second build-up interconnect structures.
申请公布号 US8354297(B2) 申请公布日期 2013.01.15
申请号 US20100876013 申请日期 2010.09.03
申请人 STATS CHIPPAC, LTD.;PAGAILA REZA A.;CHOW SENG GUAN;YOON SEUNG UK 发明人 PAGAILA REZA A.;CHOW SENG GUAN;YOON SEUNG UK
分类号 H01L21/44 主分类号 H01L21/44
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