| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A body contact layer 18 is formed on the side of a recessed structure 17 as well as in the bottom of the recessed structure 17, so that a contact area between the body contact layer 18 and a well layer 12 is increased and the amount of dopant implanted to the body contact layer 18 is suppressed.
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| 申请公布号 |
US8354712(B2) |
申请公布日期 |
2013.01.15 |
| 申请号 |
US201113023889 |
申请日期 |
2011.02.09 |
| 申请人 |
PANASONIC CORPORATION;HAMADA MITSUHIRO;JOKYU KATSUYOSHI |
发明人 |
HAMADA MITSUHIRO;JOKYU KATSUYOSHI |
| 分类号 |
H01L27/108;H01L29/76 |
主分类号 |
H01L27/108 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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