发明名称 |
Method for fabricating an enlarged oxide-nitride-oxide structure for NAND flash memory semiconductor devices |
摘要 |
A method of processing a flash memory device provides a semiconductor substrate including a surface region and forming a gate dielectric layer overlying the surface region. The method forms a floating gate layer having a thickness and including a first floating gate structure overlying a first portion of the gate dielectric layer and a second floating gate structure overlying a second portion of the gate dielectric layer. The method forms a trench region interposed between the first and second floating gate structures and extending through the entire thickness and through a portion of the surface region into a depth of the substrate. The method fills the entire depth of the trench region in the substrate and a portion of the trench region over the substrate using a dielectric fill material. The method forms an oxide on nitride on oxide (ONO) layer overlying the first and second floating gate structures and the dielectric material and a control gate overlying the ONO layer.
|
申请公布号 |
US8354704(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20100917419 |
申请日期 |
2010.11.01 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION;JIANG LI;PENG HONG XIU;KIM JONG WOO |
发明人 |
JIANG LI;PENG HONG XIU;KIM JONG WOO |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|