发明名称 |
Semiconductor device including an arrangement for suppressing short channel effects |
摘要 |
An apparatus comprising a substrate of first dopant type and first dopant concentration; pocket regions in the substrate and having the first dopant type and a second dopant concentration greater than the first dopant concentration; a gate stack over the substrate and laterally between the pocket regions; first and second source/drain regions on opposing sides of the gate stack and vertically between the gate stack and the pocket regions, the first and second source/drain regions having a second dopant type opposite the first dopant type and a third dopant concentration; and third and fourth source/drain regions having the second dopant type and a fourth dopant concentration that is greater than the third dopant concentration, wherein the pocket regions are between the third and fourth source/drain regions, and the third and fourth source/drain regions are vertically between the first and second source/drain regions and a bulk portion of the substrate.
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申请公布号 |
US8354718(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20070751959 |
申请日期 |
2007.05.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;WANG CHIH-CHIANG;SHEU YI-MING;LIN YING-SHIOU |
发明人 |
WANG CHIH-CHIANG;SHEU YI-MING;LIN YING-SHIOU |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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