发明名称 |
Germanium films by polymer-assisted deposition |
摘要 |
Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.
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申请公布号 |
US8354046(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20090558314 |
申请日期 |
2009.09.11 |
申请人 |
LOS ALAMOS NATIONAL SECURITY, LLC;JIA QUANXI;BURRELL ANTHONY K.;BAUER EVE;RONNING FILIP;MCCLESKEY THOMAS MARK;ZOU GUIFU |
发明人 |
JIA QUANXI;BURRELL ANTHONY K.;BAUER EVE;RONNING FILIP;MCCLESKEY THOMAS MARK;ZOU GUIFU |
分类号 |
H01B1/02 |
主分类号 |
H01B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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