发明名称 Germanium films by polymer-assisted deposition
摘要 Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.
申请公布号 US8354046(B2) 申请公布日期 2013.01.15
申请号 US20090558314 申请日期 2009.09.11
申请人 LOS ALAMOS NATIONAL SECURITY, LLC;JIA QUANXI;BURRELL ANTHONY K.;BAUER EVE;RONNING FILIP;MCCLESKEY THOMAS MARK;ZOU GUIFU 发明人 JIA QUANXI;BURRELL ANTHONY K.;BAUER EVE;RONNING FILIP;MCCLESKEY THOMAS MARK;ZOU GUIFU
分类号 H01B1/02 主分类号 H01B1/02
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