发明名称 |
Power MOSFET and its edge termination |
摘要 |
Improved MOSFET structures and processes, where multiple polysilicon embedded regions are introduced into the n+ source contact area. A top poly Field Plate is used to shield the electric field from penetrating into the channel, so that a very short channel can be used without jeopardizing the device drain-source leakage current. A bottom poly Field Plate is used to modulate the electric field distribution in the drift region such that a more uniform field distribution can be obtained.
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申请公布号 |
US8354711(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20100806203 |
申请日期 |
2010.01.11 |
申请人 |
MAXPOWER SEMICONDUCTOR, INC.;ZENG JUN;DARWISH MOHAMED N.;BLANCHARD RICHARD A |
发明人 |
ZENG JUN;DARWISH MOHAMED N.;BLANCHARD RICHARD A |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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