A semiconductor capacitor and its method of fabrication are disclosed. A non-linear nitride layer is used to increase the surface area of a capacitor plate, resulting in increased capacitance without increase in chip area used for the capacitor.
申请公布号
US8354703(B2)
申请公布日期
2013.01.15
申请号
US201113165191
申请日期
2011.06.21
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;HORAK DAVID VACLAV;PONOTH SHOM;SHOBHA HOSADURGA;YANG CHIH-CHAO
发明人
HORAK DAVID VACLAV;PONOTH SHOM;SHOBHA HOSADURGA;YANG CHIH-CHAO
