发明名称 Semiconductor integrated circuit device and a method of manufacturing the same
摘要 To provide a circuit layout design method that can prevent degradation of the circuit reliability even in highly miniaturized circuit cells. In order to prevent noise from a power supply potential or a reference potential with a large potential difference from affecting a gate electrode and causing a malfunction, a first plug connected to the gate electrode and a second plug to which the power supply potential or the reference potential is supplied are required to be spaced from each other by a distance sufficient for the noise from the power supply potential or the reference potential not to affect the first plug. To this end, among the second plugs placed at equal intervals under the wiring, only the second plug placed at a layout position that is not sufficiently spaced from the first plug is deleted at the time of planar layout design.
申请公布号 US8354697(B2) 申请公布日期 2013.01.15
申请号 US201113240901 申请日期 2011.09.22
申请人 RENESAS ELECTRONICS CORPORATION;SHIMIZU HIROHARU;NISHIBORI MASAKAZU;OCHIAI TOSHIHIKO 发明人 SHIMIZU HIROHARU;NISHIBORI MASAKAZU;OCHIAI TOSHIHIKO
分类号 H01L27/10 主分类号 H01L27/10
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