A FORMING METHOD FOR CARBON THIN FILM AND A MAKING METHOD FOR SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a carbon thin film and a method for fabricating a semiconductor memory device are provided to deposit a carbon thin film in a low temperature and to reduce fabrication costs. CONSTITUTION: Halocarbon is supplied to a reaction space(S101). The excess of halocarbon is removed(S102). Hydrogen or hydrogen plasma is supplied to the reaction space(S103). The reactant of hydrogen or halogen atom is removed(S104). [Reference numerals] (AA) Start; (BB) Terminating a first cycle; (S101) Supplying halocarbon to a reaction space; (S102) Removing excess of halocarbon; (S103) Supplying hydrogen or hydrogen plasma; (S104) Removing reactant of hydrogen or halogen atom