| 摘要 |
Provided is a method for refining impurities in MG-Si using the difference in density of slag and silicon. The refining method of the present invention comprises the steps of: adjusting the atmosphere of a refining crucible to a reducible gas atmosphere of a gas mixture of Ar and H2; charging a MG-Si raw material inside the crucible having the adjusted atmosphere, then heating and melting the MG-Si raw material; inserting the slag including SiO2 having a higher density than the silicon into the MG-Si melted crucible; and not only reduction-refining on the interface of the inserted slag and melted Si, but also vaporization-refining the impurities in the MG-Si through a vaporization reaction of the melted Si of an upper portion. |
