| 摘要 |
The present invention provides a method of producing a semiconductor device, which comprises the steps of: providing a substrate which has at least one pillar-shaped semiconductor layer formed on at least a portion of a region above the substrate; forming a first dielectric film on at least a portion of a region above the substrate, the at least the portion of the region including at least a surface of the at least one pillar-shaped semiconductor layer; forming a conductive film on the first dielectric film; anisotropically removing the first dielectric film and the conductive film in such a manner that respective portions of the conductive film and the first dielectric film each located along a side surface of the pillar-shaped semiconductor layer are formed to have their desired lengths for forming a gate electrode; forming a protective film on at least a part of a surface of the resulting product; anisotropically removing the protective film to form a protective film-based sidewall having a desired film thickness, on respective tops of the portions of the conductive film and the first dielectric film each located along the side surface of the pillar-shaped semiconductor layer and formed to have the desired length; and selectively removing the conductive film and the first dielectric film while protecting, by the protective film-based sidewall, the portions of the conductive film and the first dielectric film each located along the side surface of the pillar-shaped semiconductor layer and formed to have the desired length, to form the gate electrode and a gate line extending from the gate electrode toward the substrate. |
