| 摘要 |
PURPOSE: A dry-etching method for a magnetic tunnel junction structure is provided to easily manufacture a nanometer magnetic tunnel junction structure by having excellent etching property better than a dry etching method without corrosion and re-evaporation. CONSTITUTION: An alcohol gas containing hydrogen, oxygen, and hydroxy and a mixed gas of the alcohol gas and an argon gas are used as an etching gas. The etching gas is plasma-processed to etch with radical and ion among plasma. The alcohol gas uses CH3OH, C2H5OH, and all kinds of alcohol gases. The concentration of the CH3OH gas is within 40 vol.% to 80 vol.%. The etching process is implemented under pressures within 1 mTorr to 5 mTorr. |
